BSC093N04LSGATMA1

Infineon Technologies

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BSC093N04LSGATMA1

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Package:

PG-TDSON-8-5

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Description:

MOSFET N-CH 40V 13A/49A TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	9.3mOhm @ 40A, 10V
Supplier Device Package	PG-TDSON-8-5
Vgs(th) (Max) @ Id	2V @ 14µA
Drain to Source Voltage (Vdss)	40 V
Series	OptiMOS™
Power Dissipation (Max)	2.5W (Ta), 35W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 49A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSC093