BSC097N06NSTATMA1

Infineon Technologies

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BSC097N06NSTATMA1

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Package:

PG-TDSON-8-1

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Description:

MOSFET N-CH 60V 13A/48A TDSON

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1075 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	9.7mOhm @ 40A, 10V
Supplier Device Package	PG-TDSON-8-1
Vgs(th) (Max) @ Id	3.3V @ 14µA
Drain to Source Voltage (Vdss)	60 V
Series	OptiMOS™
Power Dissipation (Max)	3W (Ta), 43W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 48A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSC097