BSP100,135

NXP Semiconductors

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BSP100,135

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SOT-223

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NEXPERIA BSP100 - 3.5A, 30V, 0.1

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Operating Temperature	-65°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	100mOhm @ 2.2A, 10V
Supplier Device Package	SOT-223
Vgs(th) (Max) @ Id	2.8V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchMOS™
Power Dissipation (Max)	8.3W (Tc)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk