BSZ086P03NS3EGATMA1

Infineon Technologies

Product No:

BSZ086P03NS3EGATMA1

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Package:

PG-TSDSON-8

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Description:

MOSFET P-CH 30V 13.5A/40A TSDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	4785 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	57.5 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.6mOhm @ 20A, 10V
Supplier Device Package	PG-TSDSON-8
Vgs(th) (Max) @ Id	3.1V @ 105µA
Drain to Source Voltage (Vdss)	30 V
Series	OptiMOS™
Power Dissipation (Max)	2.1W (Ta), 69W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	13.5A (Ta), 40A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSZ086