BUK6C2R1-55C,118-NX

NXP USA Inc.

Product No:

BUK6C2R1-55C,118-NX

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Package:

D2PAK-7

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Description:

PFET, 228A I(D), 55V, 0.0037OHM,

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	16000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	253 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	2.3mOhm @ 90A, 10V
Supplier Device Package	D2PAK-7
Vgs(th) (Max) @ Id	2.8V @ 1mA
Drain to Source Voltage (Vdss)	55 V
Series	Automotive, AEC-Q101, TrenchMOS™
Power Dissipation (Max)	300W (Tc)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	228A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk