BYR29X-600,127

NXP Semiconductors

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BYR29X-600,127

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Package:

TO-220F

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Description:

DIODE GEN PURP 600V 8A TO220F

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Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	75 ns
Capacitance @ Vr, F	-
Mounting Type	Through Hole
Product Status	Active
Supplier Device Package	TO-220F
Current - Reverse Leakage @ Vr	10 µA @ 600 V
Series	-
Package / Case	TO-220-2 Full Pack
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A
Mfr	NXP Semiconductors
Voltage - DC Reverse (Vr) (Max)	600 V
Package	Bulk
Operating Temperature - Junction	150°C (Max)
Current - Average Rectified (Io)	8A