FDA16N50LDTU

onsemi

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FDA16N50LDTU

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Package:

TO-3PN (L-Forming)

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Description:

MOSFET N-CH 500V 16.5A TO3PN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	380mOhm @ 8.3A, 10V
Supplier Device Package	TO-3PN (L-Forming)
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	500 V
Series	-
Power Dissipation (Max)	205W (Tc)
Package / Case	TO-3P-3, SC-65-3 (Formed Leads)
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	16.5A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FDA16N50