FDMD8260LET60

Fairchild Semiconductor

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FDMD8260LET60

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Package:

12-Power3.3x5

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Description:

POWER FIELD-EFFECT TRANSISTOR, N

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	5245pF @ 30V
Gate Charge (Qg) (Max) @ Vgs	68nC @ 10V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	5.8mOhm @ 15A, 10V
Supplier Device Package	12-Power3.3x5
Vgs(th) (Max) @ Id	3V @ 250µA
Drain to Source Voltage (Vdss)	60V
Series	PowerTrench®
Package / Case	12-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	1.1W
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	15A
Package	Bulk
Base Product Number	FDMD8260