FDR840P

Fairchild Semiconductor

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FDR840P

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Package:

SuperSOT™-8

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Description:

MOSFET P-CH 20V 10A SUPERSOT8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	4481 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	12mOhm @ 10A, 4.5V
Supplier Device Package	SuperSOT™-8
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1.8W (Ta)
Package / Case	8-TSOP (0.130", 3.30mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Bulk