FDU6512A

Fairchild Semiconductor

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FDU6512A

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Package:

I-PAK

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Description:

MOSFET N-CH 20V 10.7A/36A IPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1082 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 4.5 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	21mOhm @ 10.7A, 4.5V
Supplier Device Package	I-PAK
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	PowerTrench®
Power Dissipation (Max)	3.8W (Ta), 43W (Tc)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	10.7A (Ta), 36A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tube