FDZ3N513ZT

Fairchild Semiconductor

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FDZ3N513ZT

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Package:

4-WLCSP (1x1)

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Description:

MOSFET P-CH 30V 1.1A 4WLCSP

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Operating Temperature	-55°C ~ 125°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	85 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	1 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	462mOhm @ 300mA, 4.5V
Supplier Device Package	4-WLCSP (1x1)
Vgs(th) (Max) @ Id	1.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	1W (Ta)
Package / Case	4-XFBGA, WLCSP
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	1.1A
Vgs (Max)	+5.5V, -300mV
Package	Bulk