FF200R17KE3S4HOSA1

Infineon Technologies

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FF200R17KE3S4HOSA1

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Module

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Description:

IGBT MODULE VCES 1200V 200A

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Operating Temperature	-40°C ~ 125°C (TJ)
NTC Thermistor	No
Configuration	Half Bridge Inverter
Current - Collector (Ic) (Max)	310 A
Input Capacitance (Cies) @ Vce	18 nF @ 25 V
Mounting Type	Chassis Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	1700 V
Supplier Device Package	Module
Series	C
Input	Standard
Vce(on) (Max) @ Vge, Ic	2.45V @ 15V, 200A
Package / Case	Module
Power - Max	1250 W
Mfr	Infineon Technologies
Current - Collector Cutoff (Max)	3 mA
Package	Tray
IGBT Type	Trench Field Stop
Base Product Number	FF200R17