FQAF19N20L

Fairchild Semiconductor

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FQAF19N20L

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TO-3PF

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Description:

MOSFET N-CH 200V 16A TO3PF

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 5 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	140mOhm @ 8A, 10V
Supplier Device Package	TO-3PF
Vgs(th) (Max) @ Id	2V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	QFET®
Power Dissipation (Max)	85W (Tc)
Package / Case	TO-3P-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Package	Tube