FQI19N20TU

Fairchild Semiconductor

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FQI19N20TU

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I2PAK (TO-262)

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Description:

MOSFET N-CH 200V 19.4A I2PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Through Hole
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	150mOhm @ 9.7A, 10V
Supplier Device Package	I2PAK (TO-262)
Vgs(th) (Max) @ Id	5V @ 250µA
Drain to Source Voltage (Vdss)	200 V
Series	QFET®
Power Dissipation (Max)	3.13W (Ta), 140W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	19.4A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube