G29

Goford Semiconductor

Product No:

G29

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Package:

SOT-23

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Description:

P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1151 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	30mOhm @ 3A, 4.5V
Supplier Device Package	SOT-23
Vgs(th) (Max) @ Id	900mV @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1W
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	6A
Vgs (Max)	±12V
Package	Tape & Reel (TR)