IGT60R070D1ATMA4

Infineon Technologies

Product No:

IGT60R070D1ATMA4

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Package:

PG-HSOF-8-3

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Description:

GANFET N-CH

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In Stock : 1934

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 400 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	-
Supplier Device Package	PG-HSOF-8-3
Vgs(th) (Max) @ Id	1.6V @ 2.6mA
Drain to Source Voltage (Vdss)	600 V
Series	CoolGaN™
Power Dissipation (Max)	125W (Tc)
Package / Case	8-PowerSFN
Technology	GaNFET (Gallium Nitride)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Vgs (Max)	-10V
Drive Voltage (Max Rds On, Min Rds On)	-
Package	Tape & Reel (TR)