IMBG65R048M1HXTMA1

Infineon Technologies

Product No:

IMBG65R048M1HXTMA1

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Package:

PG-TO263-7-12

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Description:

SILICON CARBIDE MOSFET PG-TO263-

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 18 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	64mOhm @ 20.1A, 18V
Supplier Device Package	PG-TO263-7-12
Vgs(th) (Max) @ Id	5.7V @ 6mA
Drain to Source Voltage (Vdss)	650 V
Series	CoolSiC™
Power Dissipation (Max)	183W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Vgs (Max)	+23V, -5V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Tape & Reel (TR)
Base Product Number	IMBG65