IMW120R040M1HXKSA1

Infineon Technologies

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IMW120R040M1HXKSA1

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PG-TO247-3

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SIC DISCRETE

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1620 nF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 18 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	54.4mOhm @ 19.3A, 18V
Supplier Device Package	PG-TO247-3
Vgs(th) (Max) @ Id	5.2V @ 10mA
Drain to Source Voltage (Vdss)	1200 V
Series	CoolSiC™
Power Dissipation (Max)	227W (Tc)
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	55A (Tc)
Vgs (Max)	+20V, -5V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Package	Tube