IPB011N04NF2SATMA1

Infineon Technologies

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IPB011N04NF2SATMA1

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Package:

PG-TO263-3

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Description:

TRENCH <= 40V

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	315 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.15mOhm @ 100A, 10V
Supplier Device Package	PG-TO263-3
Vgs(th) (Max) @ Id	3.4V @ 249µA
Drain to Source Voltage (Vdss)	40 V
Series	StrongIRFET™2
Power Dissipation (Max)	3.8W (Ta), 375W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	43A (Ta), 201A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPB011