IPB35N10S3L26ATMA1

Infineon Technologies

Product No:

IPB35N10S3L26ATMA1

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Package:

PG-TO263-3

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Description:

MOSFET N-CH 100V 35A D2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	26.3mOhm @ 35A, 10V
Supplier Device Package	PG-TO263-3
Vgs(th) (Max) @ Id	2.4V @ 39µA
Drain to Source Voltage (Vdss)	100 V
Series	Automotive, AEC-Q101, OptiMOS™
Power Dissipation (Max)	71W (Tc)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPB35N10