IPBE65R050CFD7AATMA1

Infineon Technologies

Product No:

Manufacturer:

Package:

PG-TO263-7-3-10

Batch:

Datasheet:

Description:

MOSFET N-CH 650V 45A TO263-7

Quantity:

Delivery:

Payment:

In Stock : 1963

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4975 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	102 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	50mOhm @ 24.8A, 10V
Supplier Device Package	PG-TO263-7-3-10
Vgs(th) (Max) @ Id	4.5V @ 1.24mA
Drain to Source Voltage (Vdss)	650 V
Series	Automotive, AEC-Q101, CoolMOS™ CFD7A
Power Dissipation (Max)	227W (Tc)
Package / Case	TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPBE65