IPD5N25S3430ATMA1

Infineon Technologies

Product No:

IPD5N25S3430ATMA1

Manufacturer:

Package:

PG-TO252-3-313

Batch:

Datasheet:

Description:

MOSFET N-CH 250V 5A TO252-3

Quantity:

Delivery:

Payment:

In Stock : 3536

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	422 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.2 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	430mOhm @ 5A, 10V
Supplier Device Package	PG-TO252-3-313
Vgs(th) (Max) @ Id	4V @ 13µA
Drain to Source Voltage (Vdss)	250 V
Series	Automotive, AEC-Q101, OptiMOS™
Power Dissipation (Max)	41W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPD5N25