Home / FET, MOSFET Arrays / IPG20N04S4L11ATMA1
minImg

IPG20N04S4L11ATMA1

Infineon Technologies

Product No:

IPG20N04S4L11ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-4

Batch:

-

Datasheet:

-

Description:

MOSFET 2N-CH 40V 20A 8TDSON

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 17430

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.3395

    $1.3395

  • 10

    $1.19415

    $11.9415

  • 100

    $0.931095

    $93.1095

  • 500

    $0.769139

    $384.5695

  • 1000

    $0.607221

    $607.221

  • 2000

    $0.566742

    $1133.484

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Certif02 Certif07 Certif03 Certif04 Certif08 Certif10 Certif09 Certif05 Certif06

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Mounting Type Surface Mount
Product Status Active
Rds On (Max) @ Id, Vgs 11.6mOhm @ 17A, 10V
Supplier Device Package PG-TDSON-8-4
Vgs(th) (Max) @ Id 2.2V @ 15µA
Drain to Source Voltage (Vdss) 40V
Series Automotive, AEC-Q101, OptiMOS™
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Power - Max 41W
Mfr Infineon Technologies
Current - Continuous Drain (Id) @ 25°C 20A
Package Tape & Reel (TR)
Base Product Number IPG20N