IPP65R099CFD7AAKSA1

Infineon Technologies

Product No:

IPP65R099CFD7AAKSA1

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Package:

PG-TO220-3

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Description:

MOSFET N-CH 650V 24A TO220-3

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2513 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	99mOhm @ 12.5A, 10V
Supplier Device Package	PG-TO220-3
Vgs(th) (Max) @ Id	4.5V @ 630µA
Drain to Source Voltage (Vdss)	650 V
Series	Automotive, AEC-Q101, CoolMOS™ CFD7A
Power Dissipation (Max)	127W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPP65R099