IPT012N08NF2SATMA1

Infineon Technologies

Product No:

IPT012N08NF2SATMA1

Manufacturer:

Package:

PG-HSOF-8

Batch:

Datasheet:

Description:

MOSFET

Quantity:

Delivery:

Payment:

In Stock : 1702

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs	255 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.23mOhm @ 150A, 10V
Supplier Device Package	PG-HSOF-8
Vgs(th) (Max) @ Id	3.8V @ 267µA
Drain to Source Voltage (Vdss)	80 V
Series	StrongIRFET™ 2
Power Dissipation (Max)	3.8W (Ta), 300W (Tc)
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	39A (Ta), 351A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)