IPT015N10N5ATMA1

Infineon Technologies

Product No:

IPT015N10N5ATMA1

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Package:

PG-HSOF-8-1

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Description:

MOSFET N-CH 100V 300A 8HSOF

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	16000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	211 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.5mOhm @ 150A, 10V
Supplier Device Package	PG-HSOF-8-1
Vgs(th) (Max) @ Id	3.8V @ 250µA
Drain to Source Voltage (Vdss)	100 V
Series	OptiMOS™
Power Dissipation (Max)	375W (Tc)
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	IPT015