IQDH45N04LM6CGATMA1

Infineon Technologies

Product No:

IQDH45N04LM6CGATMA1

Manufacturer:

Package:

PG-TTFN-9-U02

Batch:

Datasheet:

Description:

OPTIMOS 6 POWER-TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 4967

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	129 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	0.45mOhm @ 50A, 10V
Supplier Device Package	PG-TTFN-9-U02
Vgs(th) (Max) @ Id	2.3V @ 1.449mA
Drain to Source Voltage (Vdss)	40 V
Series	OptiMOS™ 6
Power Dissipation (Max)	3W (Ta), 333W (Tc)
Package / Case	9-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	60A (Ta), 637A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	IQDH45