IRFB33N15DPBF

International Rectifier

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IRFB33N15DPBF

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Package:

TO-220AB

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Description:

MOSFET N-CH 150V 33A TO220AB

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	56mOhm @ 20A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	5.5V @ 250µA
Drain to Source Voltage (Vdss)	150 V
Series	HEXFET®
Power Dissipation (Max)	3.8W (Ta), 170W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk