IRFH5053TRPBF

Infineon Technologies

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IRFH5053TRPBF

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PQFN (5x6) Single Die

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Description:

MOSFET N-CH 100V 9.3A/46A PQFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1510 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	18mOhm @ 9.3A, 10V
Supplier Device Package	PQFN (5x6) Single Die
Vgs(th) (Max) @ Id	4.9V @ 100µA
Drain to Source Voltage (Vdss)	100 V
Series	HEXFET®
Power Dissipation (Max)	3.1W (Ta), 8.3W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	9.3A (Ta), 46A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IRFH5053