IRFH5104TR2PBF

Infineon Technologies

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IRFH5104TR2PBF

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Package:

PQFN (5x6)

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Description:

MOSFET N-CH 40V 24A/100A PQFN

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	3.5mOhm @ 50A, 10V
Supplier Device Package	PQFN (5x6)
Vgs(th) (Max) @ Id	4V @ 100µA
Drain to Source Voltage (Vdss)	40 V
Series	HEXFET®
Power Dissipation (Max)	3.6W (Ta), 114W (Tc)
Package / Case	8-VQFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	24A (Ta), 100A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)