IRFHS8242TRPBF

International Rectifier

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IRFHS8242TRPBF

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Package:

6-PQFN (2x2)

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Description:

IRFHS8242 - HEXFET POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	653 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	10.4 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	13mOhm @ 8.5A, 10V
Supplier Device Package	6-PQFN (2x2)
Vgs(th) (Max) @ Id	2.35V @ 25µA
Drain to Source Voltage (Vdss)	25 V
Series	HEXFET®
Power Dissipation (Max)	2.1W (Ta)
Package / Case	6-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	9.9A (Ta), 21A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk