ISC0803NLSATMA1

Infineon Technologies

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ISC0803NLSATMA1

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Package:

PG-TDSON-8

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Description:

MOSFET N-CH 100V 8.8A/37A 8TDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	16.9mOhm @ 20A, 10V
Supplier Device Package	PG-TDSON-8
Vgs(th) (Max) @ Id	2.3V @ 18µA
Drain to Source Voltage (Vdss)	100 V
Series	OptiMOS™ 5
Power Dissipation (Max)	2.5W (Ta), 43W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	8.8A (Ta), 37A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISC0803N