ISZ0804NLSATMA1

Infineon Technologies

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ISZ0804NLSATMA1

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Package:

PG-TSDSON-8-26

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Description:

MOSFET N-CH 100V 11A/58A TSDSON

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	11.5mOhm @ 20A, 10V
Supplier Device Package	PG-TSDSON-8-26
Vgs(th) (Max) @ Id	2.3V @ 28µA
Drain to Source Voltage (Vdss)	100 V
Series	OptiMOS™ 5
Power Dissipation (Max)	2.1W (Ta), 60W (Tc)
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 58A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	ISZ0804N