MSC360SMA120SA

Microchip Technology

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MSC360SMA120SA

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MOSFET SIC 1200 V 360 MOHM TO-26

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	255 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 20 V
Mounting Type	-
Product Status	Active
Rds On (Max) @ Id, Vgs	450mOhm @ 5A, 20V
Supplier Device Package	-
Vgs(th) (Max) @ Id	3.14V @ 250µA
Drain to Source Voltage (Vdss)	1200 V
Series	-
Power Dissipation (Max)	71W (Tc)
Package / Case	-
Technology	SiCFET (Silicon Carbide)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	+23V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	MSC360