MSCSM170HM087CAG

Microchip Technology

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MSCSM170HM087CAG

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PM-MOSFET-SIC-SBD-SP6C

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
Configuration	4 N-Channel (Full Bridge)
Input Capacitance (Ciss) (Max) @ Vds	13200pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs	712nC @ 20V
Mounting Type	Chassis Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	11.3mOhm @ 120A, 20V
Supplier Device Package	-
Vgs(th) (Max) @ Id	3.2V @ 10mA
Drain to Source Voltage (Vdss)	1700V (1.7kV)
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	1.114kW (Tc)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	238A (Tc)
Package	Bulk
Base Product Number	MSCSM170