MT3S111P(TE12L,F)

Toshiba Semiconductor and Storage

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MT3S111P(TE12L,F)

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Package:

PW-MINI

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Description:

RF TRANS NPN 6V 8GHZ PW-MINI

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Operating Temperature	150°C (TJ)
Frequency - Transition	8GHz
Current - Collector (Ic) (Max)	100mA
Mounting Type	Surface Mount
Product Status	Obsolete
Voltage - Collector Emitter Breakdown (Max)	6V
Supplier Device Package	PW-MINI
Series	-
Transistor Type	NPN
Package / Case	TO-243AA
Power - Max	1W
Mfr	Toshiba Semiconductor and Storage
Noise Figure (dB Typ @ f)	1.25dB @ 1GHz
Package	Tape & Reel (TR)
Gain	10.5dB
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 30mA, 5V
Base Product Number	MT3S111