PHT6NQ10T,135

Nexperia USA Inc.

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PHT6NQ10T,135

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SOT-223

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Description:

MOSFET N-CH 100V 3A SOT223

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Operating Temperature	-65°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Not For New Designs
Rds On (Max) @ Id, Vgs	90mOhm @ 3A, 10V
Supplier Device Package	SOT-223
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	100 V
Series	TrenchMOS™
Power Dissipation (Max)	1.8W (Ta), 8.3W (Tc)
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PHT6NQ10