PJQ4433EP-AU_R2_002A1

Panjit International Inc.

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DFN3333-8

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30V P-CHANNEL ENHANCEMENT MODE M

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	2310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.8mOhm @ 10A, 10V
Supplier Device Package	DFN3333-8
Vgs(th) (Max) @ Id	2.5V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	Automotive, AEC-Q101
Power Dissipation (Max)	2.5W (Ta), 65W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C	13.3A (Ta), 68A (Tc)
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)