PMCXB1000UEZ

Nexperia USA Inc.

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PMCXB1000UEZ

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Package:

DFN1010B-6

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Description:

MOSFET N/P-CH 30V DFN1010B-6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	N and P-Channel Complementary
Input Capacitance (Ciss) (Max) @ Vds	30.3pF @ 15V, 43.2pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	1.05nC @ 4.5V, 1.2nC @ 4.5V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
Supplier Device Package	DFN1010B-6
Vgs(th) (Max) @ Id	950mV @ 250µA
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	6-XFDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Power - Max	285mW (Ta)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	590mA (Ta), 410mA (Ta)
Package	Tape & Reel (TR)
Base Product Number	PMCXB1000