PMPB07R3ENAX

Nexperia USA Inc.

Product No:

PMPB07R3ENAX

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Package:

DFN2020M-6

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Description:

SMALL SIGNAL MOSFET FOR MOBILE

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In Stock : 3000

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	914 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	8.6mOhm @ 12A, 10V
Supplier Device Package	DFN2020M-6
Vgs(th) (Max) @ Id	2.2V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	TrenchMOS™
Power Dissipation (Max)	1.9W (Ta), 12.5W (Tc)
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)