PMPB33XP,115

NXP USA Inc.

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PMPB33XP,115

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Package:

DFN1010B-6

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Description:

NOW NEXPERIA PMPB33XP - 5.5A, 20

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1575 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	37mOhm @ 5.5A, 4.5V
Supplier Device Package	DFN1010B-6
Vgs(th) (Max) @ Id	900mV @ 250µA
Drain to Source Voltage (Vdss)	20 V
Series	-
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Package / Case	6-XFDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Package	Bulk