PMZ200UNE/S500YL

Nexperia USA Inc.

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PMZ200UNE/S500YL

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Package:

DFN1006-3

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Description:

PMZ200UNE - N Channel MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	89 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	2.7 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	250mOhm @ 1.4A, 4.5V
Supplier Device Package	DFN1006-3
Vgs(th) (Max) @ Id	0.95V @ 250µA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	350mW (Ta), 6.25W (Tc)
Package / Case	SC-101, SOT-883
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Bulk