PSMN1R0-40YSHX

Nexperia USA Inc.

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PSMN1R0-40YSHX

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Package:

LFPAK56; Power-SO8

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Description:

MOSFET N-CH 40V 290A LFPAK56

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9433 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1mOhm @ 25A, 10V
Supplier Device Package	LFPAK56; Power-SO8
Vgs(th) (Max) @ Id	3.6V @ 1mA
Drain to Source Voltage (Vdss)	40 V
Series	-
Power Dissipation (Max)	333W (Ta)
Package / Case	SOT-1023, 4-LFPAK
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	290A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	PSMN1R0