PSMN2R6-60PSQ

NXP USA Inc.

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PSMN2R6-60PSQ

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Package:

TO-220AB

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NOW NEXPERIA PSMN2R6-60PSQ - 150

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7629 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.6mOhm @ 25A, 10V
Supplier Device Package	TO-220AB
Vgs(th) (Max) @ Id	4V @ 1mA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	326W (Tc)
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	150A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk