R6507ENXC7G

Rohm Semiconductor

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R6507ENXC7G

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Package:

TO-220FM

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Description:

650V 7A TO-220FM, LOW-NOISE POWE

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	665mOhm @ 2.4A, 10V
Supplier Device Package	TO-220FM
Vgs(th) (Max) @ Id	4V @ 200µA
Drain to Source Voltage (Vdss)	650 V
Series	-
Power Dissipation (Max)	46W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	R6507