RCD080N25TL

Rohm Semiconductor

Product No:

RCD080N25TL

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Package:

CPT3

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Description:

MOSFET N-CH 250V 8A CPT3

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	300mOhm @ 4A, 10V
Supplier Device Package	CPT3
Vgs(th) (Max) @ Id	5V @ 1mA
Drain to Source Voltage (Vdss)	250 V
Series	-
Power Dissipation (Max)	850mW (Ta), 20W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	RCD080