RD3L08BGNTL

Rohm Semiconductor

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RD3L08BGNTL

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TO-252

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Description:

MOSFET N-CH 60V 80A TO252

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	5.5mOhm @ 80A, 10V
Supplier Device Package	TO-252
Vgs(th) (Max) @ Id	2.5V @ 100µA
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	119W (Tc)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RD3L08