RJK0226DNS-00#J5

Nexperia USA Inc.

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RJK0226DNS-00#J5

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Package:

8-HVSON (3x3.3)

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Description:

RJK0226 - Silicon N Channel Powe

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	2.8mOhm @ 20A, 8V
Supplier Device Package	8-HVSON (3x3.3)
Vgs(th) (Max) @ Id	2.5V @ 1mA
Drain to Source Voltage (Vdss)	25 V
Series	-
Power Dissipation (Max)	30W (Tc)
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	40A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 8V
Package	Bulk