RQJ0305EQDQS#H1

Renesas Electronics America Inc

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RQJ0305EQDQS#H1

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Package:

UPAK

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Description:

MOSFET P-CH 30V 3.4A UPAK

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 4.5 V
Mounting Type	Surface Mount
Product Status	Obsolete
Rds On (Max) @ Id, Vgs	140mOhm @ 1.7A, 4.5V
Supplier Device Package	UPAK
Vgs(th) (Max) @ Id	1.4V @ 1mA
Drain to Source Voltage (Vdss)	30 V
Series	-
Power Dissipation (Max)	1.5W (Ta)
Package / Case	TO-243AA
Technology	MOSFET (Metal Oxide)
Mfr	Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)
Vgs (Max)	+8V, -12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)