SSM3J168F,LF

Toshiba Semiconductor and Storage

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SSM3J168F,LF

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Package:

SOT-23-3

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Description:

MOSFET P-CH 60V 400MA S-MINI

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	82 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	1.9Ohm @ 100mA, 4.5V
Supplier Device Package	SOT-23-3
Vgs(th) (Max) @ Id	2V @ 1mA
Drain to Source Voltage (Vdss)	60 V
Series	U-MOSVI
Power Dissipation (Max)	1.2W (Ta)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM3J168